Technische Details P2000B Diotec Semiconductor
Description: DIODE GEN PURP 100V 20A P600, Packaging: Tape & Reel (TR), Package / Case: P600, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 1.5 µs, Technology: Standard, Current - Average Rectified (Io): 20A, Supplier Device Package: P600, Operating Temperature - Junction: -50°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A, Current - Reverse Leakage @ Vr: 10 µA @ 100 V.
Weitere Produktangebote P2000B
Foto | Bezeichnung | Hersteller | Beschreibung |
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P2000B | Hersteller : Diotec Semiconductor |
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Produkt ist nicht verfügbar |
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P2000B | Hersteller : Diotec Semiconductor |
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Produkt ist nicht verfügbar |
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P2000B | Hersteller : DIOTEC SEMICONDUCTOR |
![]() Description: Diode: rectifying; THT; 100V; 20A; Ammo Pack; Ifsm: 500A; P600; 1.5us Mounting: THT Max. forward impulse current: 0.5kA Leakage current: 10µA Kind of package: Ammo Pack Type of diode: rectifying Case: P600 Max. off-state voltage: 100V Max. load current: 100A Max. forward voltage: 1.1V Load current: 20A Semiconductor structure: single diode Reverse recovery time: 1.5µs Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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P2000B | Hersteller : Diotec Semiconductor |
![]() Packaging: Tape & Reel (TR) Package / Case: P600, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: P600 Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
Produkt ist nicht verfügbar |
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P2000B | Hersteller : Diotec Semiconductor AG |
![]() Packaging: Tape & Box (TB) Package / Case: P600, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: P-600 Operating Temperature - Junction: -50°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
Produkt ist nicht verfügbar |
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P2000B | Hersteller : Diotec Semiconductor |
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Produkt ist nicht verfügbar |
|
![]() |
P2000B | Hersteller : DIOTEC SEMICONDUCTOR |
![]() Description: Diode: rectifying; THT; 100V; 20A; Ammo Pack; Ifsm: 500A; P600; 1.5us Mounting: THT Max. forward impulse current: 0.5kA Leakage current: 10µA Kind of package: Ammo Pack Type of diode: rectifying Case: P600 Max. off-state voltage: 100V Max. load current: 100A Max. forward voltage: 1.1V Load current: 20A Semiconductor structure: single diode Reverse recovery time: 1.5µs |
Produkt ist nicht verfügbar |