NZT660 Fairchild Semiconductor
Hersteller: Fairchild Semiconductor
Description: POWER BIPOLAR TRANSISTOR, 3A, 60
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 75MHz
Supplier Device Package: SOT-223-4
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Description: POWER BIPOLAR TRANSISTOR, 3A, 60
Packaging: Bulk
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 75MHz
Supplier Device Package: SOT-223-4
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
auf Bestellung 44519 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1609+ | 0.31 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NZT660 Fairchild Semiconductor
Description: TRANS PNP 60V 3A SOT223-4, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V, Frequency - Transition: 75MHz, Supplier Device Package: SOT-223-4, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 2 W.
Weitere Produktangebote NZT660 nach Preis ab 0.27 EUR bis 0.93 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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NZT660 | Hersteller : onsemi / Fairchild | Bipolar Transistors - BJT PNP Transistor Low Saturation |
auf Bestellung 1236 Stücke: Lieferzeit 10-14 Tag (e) |
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NZT660 | Hersteller : onsemi |
Description: TRANS PNP 60V 3A SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Frequency - Transition: 75MHz Supplier Device Package: SOT-223-4 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W |
auf Bestellung 4417 Stücke: Lieferzeit 10-14 Tag (e) |
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NZT660 Produktcode: 164074 |
Transistoren > Bipolar-Transistoren PNP |
Produkt ist nicht verfügbar
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NZT660 | Hersteller : ON Semiconductor | Trans GP BJT PNP 60V 3A 2000mW 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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NZT660 | Hersteller : ON Semiconductor | Trans GP BJT PNP 60V 3A 2000mW 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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NZT660 | Hersteller : ON Semiconductor | Trans GP BJT PNP 60V 3A 2000mW 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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NZT660 | Hersteller : onsemi |
Description: TRANS PNP 60V 3A SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 550mV @ 300mA, 3A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Frequency - Transition: 75MHz Supplier Device Package: SOT-223-4 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W |
Produkt ist nicht verfügbar |