NXV08H250DT1 onsemi
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Description: APM17-MDC, MV7 80V, AL2O3, 2 PHA
Packaging: Tube
Package / Case: 17-PowerDIP Module (1.390", 35.30mm)
Mounting Type: Through Hole
Configuration: 4 N-Channel
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Input Capacitance (Ciss) (Max) @ Vds: 24350pF @ 40V
Rds On (Max) @ Id, Vgs: 1.039mOhm @ 160A, 12V, 762µOhm @ 160A, 12V
Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V
Vgs(th) (Max) @ Id: 4.6V @ 1mA
Supplier Device Package: APM17-MDC
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 160 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
40+ | 98.22 EUR |
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Technische Details NXV08H250DT1 onsemi
Description: APM17-MDC, MV7 80V, AL2O3, 2 PHA, Packaging: Tube, Package / Case: 17-PowerDIP Module (1.390", 35.30mm), Mounting Type: Through Hole, Configuration: 4 N-Channel, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), Drain to Source Voltage (Vdss): 80V, Input Capacitance (Ciss) (Max) @ Vds: 24350pF @ 40V, Rds On (Max) @ Id, Vgs: 1.039mOhm @ 160A, 12V, 762µOhm @ 160A, 12V, Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V, Vgs(th) (Max) @ Id: 4.6V @ 1mA, Supplier Device Package: APM17-MDC, Grade: Automotive, Qualification: AEC-Q101.
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NXV08H250DT1 | Hersteller : ON Semiconductor |
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NXV08H250DT1 | Hersteller : onsemi |
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