Technische Details NXPSC08650XQ NXP Semiconductors
Description: DIODE SIL CARBIDE 650V 8A TO220F, Packaging: Tube, Package / Case: TO-220-2 Full Pack, Isolated Tab, Mounting Type: Through Hole, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 260pF @ 1V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: TO-220F, Operating Temperature - Junction: 175°C (Max), Part Status: Last Time Buy, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Current - Reverse Leakage @ Vr: 230 µA @ 650 V.
Weitere Produktangebote NXPSC08650XQ
Foto | Bezeichnung | Hersteller | Beschreibung |
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NXPSC08650XQ | Hersteller : WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 8A TO220F Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 260pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 230 µA @ 650 V |
Produkt ist nicht verfügbar |
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NXPSC08650XQ | Hersteller : WeEn Semiconductors | Schottky Diodes & Rectifiers NXPSC08650XQ/TO220F-2L/STANDARD M |
Produkt ist nicht verfügbar |