Technische Details NXPSC08650DJ Ween
Description: DIODE SIL CARBIDE 650V 8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: No Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 260pF @ 1V, 1MHz, Current - Average Rectified (Io): 8A, Supplier Device Package: DPAK, Operating Temperature - Junction: 175°C (Max), Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A, Current - Reverse Leakage @ Vr: 230 µA @ 650 V.
Weitere Produktangebote NXPSC08650DJ
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NXPSC08650DJ | Hersteller : NXP Semiconductors |
 NXPSC08650DJ |
Produkt ist nicht verfügbar |
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NXPSC08650DJ | Hersteller : WeEn Semiconductors |
Description: DIODE SIL CARBIDE 650V 8A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 260pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: DPAK Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 230 µA @ 650 V |
Produkt ist nicht verfügbar |
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NXPSC08650DJ | Hersteller : WeEn Semiconductors |
Schottky Diodes & Rectifiers NXPSC08650DJ/DPAK/REEL 13" Q1/T1 |
Produkt ist nicht verfügbar |