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NXH450B100H4Q2F2SG

NXH450B100H4Q2F2SG onsemi

nxh450b100h4q2f2-d.pdf Hersteller: onsemi
Description: 1000V,75A FSIII IGBT, MID SPEED
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: 2 Independent
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 150A
NTC Thermistor: Yes
Supplier Device Package: 56-PIM (93x47)
Current - Collector (Ic) (Max): 101 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 234 W
Current - Collector Cutoff (Max): 600 µA
Input Capacitance (Cies) @ Vce: 9.342 nF @ 20 V
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+351.95 EUR
12+ 329.64 EUR
36+ 317.24 EUR
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Technische Details NXH450B100H4Q2F2SG onsemi

Description: 1000V,75A FSIII IGBT, MID SPEED, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 150A, NTC Thermistor: Yes, Supplier Device Package: 56-PIM (93x47), Current - Collector (Ic) (Max): 101 A, Voltage - Collector Emitter Breakdown (Max): 1000 V, Power - Max: 234 W, Current - Collector Cutoff (Max): 600 µA, Input Capacitance (Cies) @ Vce: 9.342 nF @ 20 V.

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NXH450B100H4Q2F2SG Hersteller : onsemi NXH450B100H4Q2F2_D-2905936.pdf IGBT Modules Si/SiC Hybrid Modules, 3 Channel Symmetric Boost 1000 V, 150 A IGBT, 1200 V, 30 A SiC Diode Solder pins
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