NXH040P120MNF1PTG onsemi
Hersteller: onsemiDescription: SIC 2N-CH 1200V 30A
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 74W
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V
Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V
Vgs(th) (Max) @ Id: 4.3V @ 10mA
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Technische Details NXH040P120MNF1PTG onsemi
Description: SIC 2N-CH 1200V 30A, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Dual) Common Source, Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 74W, Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V, Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V, Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V, Vgs(th) (Max) @ Id: 4.3V @ 10mA.
Weitere Produktangebote NXH040P120MNF1PTG
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NXH040P120MNF1PTG | Hersteller : onsemi |
Discrete Semiconductor Modules SiC Module, 2-PACK Half Bridge Topology, 1200 V, 40 mohm SiC M1 MOSFET with TIM |
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