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NXH011F120M3F2PTHG

NXH011F120M3F2PTHG onsemi

Hersteller: onsemi
Description: 11M 1200V 40A M3S SIC FULL BRIDG
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 244W (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 6211.6pF @ 800V
Rds On (Max) @ Id, Vgs: 16mOhm @ 100A, 18V
Gate Charge (Qg) (Max) @ Vgs: 284nC @ 18V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.4V @ 60mA
Supplier Device Package: 34-PIM (56.7x42.5)
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+214.21 EUR
20+ 198.3 EUR
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Technische Details NXH011F120M3F2PTHG onsemi

Description: 11M 1200V 40A M3S SIC FULL BRIDG, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Full Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 244W (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 105A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 6211.6pF @ 800V, Rds On (Max) @ Id, Vgs: 16mOhm @ 100A, 18V, Gate Charge (Qg) (Max) @ Vgs: 284nC @ 18V, FET Feature: Silicon Carbide (SiC), Vgs(th) (Max) @ Id: 4.4V @ 60mA, Supplier Device Package: 34-PIM (56.7x42.5).

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NXH011F120M3F2PTHG Hersteller : ON Semiconductor nxh011f120m3f2pt-d.pdf Trans MOSFET N-CH SiC 1.2KV 105A
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