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NXH004P120M3F2PTNG

NXH004P120M3F2PTNG onsemi

nxh004p120m3f2ptng-d.pdf Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MODULE EL
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.1kW (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 338A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V
Vgs(th) (Max) @ Id: 4.4V @ 120mA
Supplier Device Package: 36-PIM (56.7x62.8)
auf Bestellung 3420 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+350.13 EUR
20+ 327.95 EUR
40+ 315.62 EUR
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Technische Details NXH004P120M3F2PTNG onsemi

Description: SILICON CARBIDE (SIC) MODULE EL, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1.1kW (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 338A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V, Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V, Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V, Vgs(th) (Max) @ Id: 4.4V @ 120mA, Supplier Device Package: 36-PIM (56.7x62.8).

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NXH004P120M3F2PTNG NXH004P120M3F2PTNG Hersteller : onsemi NXH004P120M3F2PTNG_D-3367013.pdf Discrete Semiconductor Modules Silicon Carbide (SiC) Module - EliteSiC, 4 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package Silicon Carbide (SiC) Module - EliteSiC, 4 mohm SiC M3S MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package
auf Bestellung 18 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+352.69 EUR
10+ 330.32 EUR
20+ 319.72 EUR
NXH004P120M3F2PTNG Hersteller : ON Semiconductor nxh004p120m3f2ptng-d.pdf NXH004P120M3F2PTNG
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