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NXH004P120M3F2PTHG onsemi
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Description: ELITESIC, 3 MOHM SIC M3S MOSFET,
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 785W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 284A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V
Vgs(th) (Max) @ Id: 4.4V @ 120mA
Supplier Device Package: 36-PIM (56.7x62.8)
auf Bestellung 31 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 324.14 EUR |
20+ | 303.59 EUR |
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Technische Details NXH004P120M3F2PTHG onsemi
Description: ELITESIC, 3 MOHM SIC M3S MOSFET,, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 785W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 284A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V, Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V, Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V, Vgs(th) (Max) @ Id: 4.4V @ 120mA, Supplier Device Package: 36-PIM (56.7x62.8).
Weitere Produktangebote NXH004P120M3F2PTHG nach Preis ab 295.98 EUR bis 326.5 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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NXH004P120M3F2PTHG | Hersteller : onsemi |
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auf Bestellung 15 Stücke: Lieferzeit 10-14 Tag (e) |
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NXH004P120M3F2PTHG | Hersteller : ON Semiconductor |
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