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NXH004P120M3F2PNG

NXH004P120M3F2PNG onsemi


Hersteller: onsemi
Description: 1200V 4MOHM M3S SIC HALFBRIDGE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.098W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 338A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V
FET Feature: Silicon Carbide (SiC)
Vgs(th) (Max) @ Id: 4.4V @ 120mA
Supplier Device Package: 36-PIM (56.7x62.8)
auf Bestellung 20 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+358.64 EUR
20+ 335.91 EUR
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Technische Details NXH004P120M3F2PNG onsemi

Description: 1200V 4MOHM M3S SIC HALFBRIDGE, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1.098W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 338A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V, Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V, Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V, FET Feature: Silicon Carbide (SiC), Vgs(th) (Max) @ Id: 4.4V @ 120mA, Supplier Device Package: 36-PIM (56.7x62.8).

Weitere Produktangebote NXH004P120M3F2PNG nach Preis ab 327.48 EUR bis 361.26 EUR

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NXH004P120M3F2PNG NXH004P120M3F2PNG Hersteller : onsemi NXH004P120M3F2PTNG_D-3367013.pdf Discrete Semiconductor Modules 1200V 4MOHM M3S SIC HALFBRIDGE WITH SI3N4 DBC IN F2 MODULES(NON TIM PRINT VERSION)
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+361.26 EUR
10+ 338.36 EUR
20+ 327.48 EUR