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NXH003P120M3F2PTNG onsemi
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Description: SILICON CARBIDE (SIC) MODULE EL
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 1.48kW (Tj)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 435A (Tj)
Input Capacitance (Ciss) (Max) @ Vds: 20889pF @ 800V
Rds On (Max) @ Id, Vgs: 5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 1200nC @ 20V
Vgs(th) (Max) @ Id: 4.4V @ 160mA
Supplier Device Package: 36-PIM (56.7x62.8)
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 420.38 EUR |
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Technische Details NXH003P120M3F2PTNG onsemi
Description: SILICON CARBIDE (SIC) MODULE EL, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 1.48kW (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 435A (Tj), Input Capacitance (Ciss) (Max) @ Vds: 20889pF @ 800V, Rds On (Max) @ Id, Vgs: 5mOhm @ 200A, 18V, Gate Charge (Qg) (Max) @ Vgs: 1200nC @ 20V, Vgs(th) (Max) @ Id: 4.4V @ 160mA, Supplier Device Package: 36-PIM (56.7x62.8).
Weitere Produktangebote NXH003P120M3F2PTNG nach Preis ab 383.84 EUR bis 423.42 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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NXH003P120M3F2PTNG | Hersteller : onsemi |
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auf Bestellung 47 Stücke: Lieferzeit 10-14 Tag (e) |
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NXH003P120M3F2PTNG | Hersteller : ON Semiconductor |
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