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NXH003P120M3F2PTHG onsemi
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Description: ELITESIC, 3 MOHM SIC M3S MOSFET,
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -40°C ~ 175°C (TJ)
Technology: Silicon Carbide (SiC)
Power - Max: 979W (Tc)
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 350A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 20889pF @ 800V
Rds On (Max) @ Id, Vgs: 5mOhm @ 200A, 18V
Gate Charge (Qg) (Max) @ Vgs: 1195nC @ 20V
Vgs(th) (Max) @ Id: 4.4V @ 160mA
Supplier Device Package: 36-PIM (56.7x62.8)
auf Bestellung 125 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 398.02 EUR |
20+ | 372.79 EUR |
40+ | 358.78 EUR |
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Technische Details NXH003P120M3F2PTHG onsemi
Description: ELITESIC, 3 MOHM SIC M3S MOSFET,, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 979W (Tc), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 350A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 20889pF @ 800V, Rds On (Max) @ Id, Vgs: 5mOhm @ 200A, 18V, Gate Charge (Qg) (Max) @ Vgs: 1195nC @ 20V, Vgs(th) (Max) @ Id: 4.4V @ 160mA, Supplier Device Package: 36-PIM (56.7x62.8).
Weitere Produktangebote NXH003P120M3F2PTHG nach Preis ab 363.42 EUR bis 400.91 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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NXH003P120M3F2PTHG | Hersteller : onsemi |
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auf Bestellung 40 Stücke: Lieferzeit 10-14 Tag (e) |
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NXH003P120M3F2PTHG | Hersteller : ON Semiconductor |
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