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NVMYS2D4N04CTWG onsemi
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Description: MOSFET N-CH 40V 30A/138A LFPAK4
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 138A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 90µA
Supplier Device Package: LFPAK4 (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.5 EUR |
10+ | 2.03 EUR |
100+ | 1.58 EUR |
500+ | 1.34 EUR |
1000+ | 1.09 EUR |
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Technische Details NVMYS2D4N04CTWG onsemi
Description: MOSFET N-CH 40V 30A/138A LFPAK4, Packaging: Tape & Reel (TR), Package / Case: SOT-1023, 4-LFPAK, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 138A (Tc), Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V, Power Dissipation (Max): 3.9W (Ta), 83W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 90µA, Supplier Device Package: LFPAK4 (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
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NVMYS2D4N04CTWG | Hersteller : onsemi |
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auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMYS2D4N04CTWG | Hersteller : ON Semiconductor |
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auf Bestellung 2386 Stücke: Lieferzeit 21-28 Tag (e) |
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NVMYS2D4N04CTWG | Hersteller : ON Semiconductor |
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NVMYS2D4N04CTWG | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 138A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 50A, 10V Power Dissipation (Max): 3.9W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 90µA Supplier Device Package: LFPAK4 (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |