NVMTSC4D3N15MC onsemi
Hersteller: onsemi
Description: PTNG 150V IN CEBU DFNW 8X8 DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 165A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 292W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
Description: PTNG 150V IN CEBU DFNW 8X8 DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 165A (Tc)
Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V
Power Dissipation (Max): 5W (Ta), 292W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 521µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V
auf Bestellung 2974 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 9.87 EUR |
10+ | 8.29 EUR |
100+ | 6.71 EUR |
500+ | 5.96 EUR |
1000+ | 5.1 EUR |
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Technische Details NVMTSC4D3N15MC onsemi
Description: PTNG 150V IN CEBU DFNW 8X8 DUAL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 165A (Tc), Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V, Power Dissipation (Max): 5W (Ta), 292W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 521µA, Supplier Device Package: 8-TDFNW (8.3x8.4), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V.
Weitere Produktangebote NVMTSC4D3N15MC nach Preis ab 5.35 EUR bis 9.86 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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NVMTSC4D3N15MC | Hersteller : onsemi | MOSFET Single N-Channel Power MOSFET 150V, 165A, 4.45mohm |
auf Bestellung 1200 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMTSC4D3N15MC | Hersteller : ON Semiconductor | N-Channel Power MOSFET |
Produkt ist nicht verfügbar |
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NVMTSC4D3N15MC | Hersteller : onsemi |
Description: PTNG 150V IN CEBU DFNW 8X8 DUAL Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 165A (Tc) Rds On (Max) @ Id, Vgs: 4.45mOhm @ 95A, 10V Power Dissipation (Max): 5W (Ta), 292W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 521µA Supplier Device Package: 8-TDFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 79 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6514 pF @ 75 V |
Produkt ist nicht verfügbar |