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NVMTS1D6N10MCTXG

NVMTS1D6N10MCTXG onsemi

nvmts1d6n10mc-d.pdf Hersteller: onsemi
Description: PTNG 100V SINGLE NCH PQFN8X8 STD
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 273A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V
Power Dissipation (Max): 5W (Ta), 291W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+5.31 EUR
Mindestbestellmenge: 3000
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Technische Details NVMTS1D6N10MCTXG onsemi

Description: PTNG 100V SINGLE NCH PQFN8X8 STD, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 273A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V, Power Dissipation (Max): 5W (Ta), 291W (Tc), Vgs(th) (Max) @ Id: 4V @ 650µA, Supplier Device Package: 8-DFNW (8.3x8.4), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote NVMTS1D6N10MCTXG nach Preis ab 5.64 EUR bis 10.91 EUR

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NVMTS1D6N10MCTXG NVMTS1D6N10MCTXG Hersteller : onsemi nvmts1d6n10mc-d.pdf Description: PTNG 100V SINGLE NCH PQFN8X8 STD
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 273A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V
Power Dissipation (Max): 5W (Ta), 291W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 59674 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.91 EUR
10+ 9.16 EUR
100+ 7.41 EUR
500+ 6.59 EUR
1000+ 5.64 EUR
Mindestbestellmenge: 2
NVMTS1D6N10MCTXG Hersteller : ON Semiconductor nvmts1d6n10mc-d.pdf N-Channel MOSFET
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NVMTS1D6N10MCTXG Hersteller : onsemi NVMTS1D6N10MC_D-2492288.pdf MOSFETs Single N-Channel Power MOSFET 100V, 273A, 1.7mohm
Produkt ist nicht verfügbar