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NVMTS0D6N04CLTXG

NVMTS0D6N04CLTXG onsemi

NVMTS0D6N04CL_D-2319894.pdf Hersteller: onsemi
MOSFET Single N-Channel Power MOSFET 40V, 469A, 0.42mohm
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
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1+13.13 EUR
10+ 11.25 EUR
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250+ 8.82 EUR
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Technische Details NVMTS0D6N04CLTXG onsemi

Description: T6 40V LL PQFN8*8 EXPANSI, Packaging: Tape & Reel (TR), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 78.9A (Ta), 554.5A (Tc), Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V, Power Dissipation (Max): 5W (Ta), 245W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 16013 pF @ 20 V, Grade: Automotive, Qualification: AEC-Q101.

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NVMTS0D6N04CLTXG NVMTS0D6N04CLTXG Hersteller : onsemi nvmts0d6n04cl-d.pdf Description: T6 40V LL PQFN8*8 EXPANSI
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78.9A (Ta), 554.5A (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta), 245W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16013 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2939 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+13.22 EUR
10+ 11.33 EUR
100+ 9.44 EUR
500+ 8.33 EUR
1000+ 7.5 EUR
Mindestbestellmenge: 2
NVMTS0D6N04CLTXG NVMTS0D6N04CLTXG Hersteller : ON Semiconductor nvmts0d6n04cl-d.pdf Power MOSFET
Produkt ist nicht verfügbar
NVMTS0D6N04CLTXG NVMTS0D6N04CLTXG Hersteller : onsemi nvmts0d6n04cl-d.pdf Description: T6 40V LL PQFN8*8 EXPANSI
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78.9A (Ta), 554.5A (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Power Dissipation (Max): 5W (Ta), 245W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16013 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar