auf Bestellung 5232 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 1.36 EUR |
10+ | 1.19 EUR |
100+ | 1.04 EUR |
500+ | 0.96 EUR |
1000+ | 0.79 EUR |
2500+ | 0.74 EUR |
5000+ | 0.7 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NVMS5P02R2G onsemi
Description: MOSFET P-CH 20V 3.95A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.95A (Ta), Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 4.5V, Vgs(th) (Max) @ Id: 1.25V @ 250µA, Supplier Device Package: 8-SOIC, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 16 V.
Weitere Produktangebote NVMS5P02R2G nach Preis ab 0.93 EUR bis 2.04 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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NVMS5P02R2G | Hersteller : onsemi |
Description: MOSFET P-CH 20V 3.95A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.95A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 8-SOIC Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 16 V |
auf Bestellung 4615 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMS5P02R2G | Hersteller : ON Semiconductor | Trans MOSFET P-CH 20V 7.05A Automotive 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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NVMS5P02R2G | Hersteller : onsemi |
Description: MOSFET P-CH 20V 3.95A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.95A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 5.4A, 4.5V Vgs(th) (Max) @ Id: 1.25V @ 250µA Supplier Device Package: 8-SOIC Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 16 V |
Produkt ist nicht verfügbar |