
NVMJS1D4N06CLTWG onsemi

Description: MOSFET N-CH 60V 39A/262A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 262A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 4W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 2V @ 280µA
Supplier Device Package: 8-LFPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7430 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2725 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3+ | 6.23 EUR |
10+ | 4.07 EUR |
100+ | 2.86 EUR |
500+ | 2.34 EUR |
1000+ | 2.17 EUR |
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Technische Details NVMJS1D4N06CLTWG onsemi
Description: MOSFET N-CH 60V 39A/262A 8LFPAK, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 262A (Tc), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V, Power Dissipation (Max): 4W (Ta), 180W (Tc), Vgs(th) (Max) @ Id: 2V @ 280µA, Supplier Device Package: 8-LFPAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7430 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
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NVMJS1D4N06CLTWG | Hersteller : ON Semiconductor |
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NVMJS1D4N06CLTWG | Hersteller : ONSEMI |
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NVMJS1D4N06CLTWG | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 262A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V Power Dissipation (Max): 4W (Ta), 180W (Tc) Vgs(th) (Max) @ Id: 2V @ 280µA Supplier Device Package: 8-LFPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7430 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVMJS1D4N06CLTWG | Hersteller : onsemi |
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Produkt ist nicht verfügbar |