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NVMJS1D4N06CLTWG onsemi
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Description: MOSFET N-CH 60V 39A/262A 8LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 262A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V
Power Dissipation (Max): 4W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 2V @ 280µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7430 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 2890 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.42 EUR |
10+ | 3.72 EUR |
100+ | 3.01 EUR |
500+ | 2.67 EUR |
1000+ | 2.29 EUR |
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Technische Details NVMJS1D4N06CLTWG onsemi
Description: MOSFET N-CH 60V 39A/262A 8LFPAK, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 262A (Tc), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V, Power Dissipation (Max): 4W (Ta), 180W (Tc), Vgs(th) (Max) @ Id: 2V @ 280µA, Supplier Device Package: 8-LFPAK, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7430 pF @ 30 V, Qualification: AEC-Q101.
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NVMJS1D4N06CLTWG | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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NVMJS1D4N06CLTWG | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 262A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 50A, 10V Power Dissipation (Max): 4W (Ta), 180W (Tc) Vgs(th) (Max) @ Id: 2V @ 280µA Supplier Device Package: 8-LFPAK Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7430 pF @ 30 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVMJS1D4N06CLTWG | Hersteller : onsemi |
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Produkt ist nicht verfügbar |