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NVMJD012N06CLTWG ON Semiconductor


nvmjd012n06cl-d.pdf Hersteller: ON Semiconductor
MOSFET-Power, Dual N-Channel
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Technische Details NVMJD012N06CLTWG ON Semiconductor

Description: MOSFET 2N-CH 60V 11.5A 8LFPAK, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.2W (Ta), 42W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 42A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 792pF @ 25V, Rds On (Max) @ Id, Vgs: 11.9mOhm @ 25A, 10V, Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V, Vgs(th) (Max) @ Id: 2.2V @ 30µA, Supplier Device Package: 8-LFPAK, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.

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NVMJD012N06CLTWG NVMJD012N06CLTWG Hersteller : onsemi nvmjd012n06cl-d.pdf Description: MOSFET 2N-CH 60V 11.5A 8LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 42W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 792pF @ 25V
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: 8-LFPAK
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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NVMJD012N06CLTWG NVMJD012N06CLTWG Hersteller : onsemi NVMJD012N06CL_D-3150513.pdf MOSFET Dual N-Channel Power MOSFET 60V, 42A, 11.9mohm
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