NVMJD010N10MCLTWG onsemi
auf Bestellung 3000 Stücke:
Lieferzeit 157-161 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.87 EUR |
| 10+ | 3.22 EUR |
| 100+ | 2.55 EUR |
| 250+ | 2.36 EUR |
| 500+ | 2.15 EUR |
| 1000+ | 1.83 EUR |
| 3000+ | 1.75 EUR |
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Technische Details NVMJD010N10MCLTWG onsemi
Description: PTNG 100V N-CH LL IN LFPAK56 DUA, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W (Ta), 84W (Tc), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 62A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1795pF @ 50V, Rds On (Max) @ Id, Vgs: 10mOhm @ 17A, 10V, Gate Charge (Qg) (Max) @ Vgs: 26.4nC @ 10V, Vgs(th) (Max) @ Id: 3V @ 97µA, Supplier Device Package: 8-LFPAK, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVMJD010N10MCLTWG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| NVMJD010N10MCLTWG | Hersteller : ON Semiconductor |
 N-Channel Power MOSFET Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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NVMJD010N10MCLTWG | Hersteller : onsemi |
Description: PTNG 100V N-CH LL IN LFPAK56 DUA Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 84W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 62A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1795pF @ 50V Rds On (Max) @ Id, Vgs: 10mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 26.4nC @ 10V Vgs(th) (Max) @ Id: 3V @ 97µA Supplier Device Package: 8-LFPAK Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVMJD010N10MCLTWG | Hersteller : onsemi |
Description: PTNG 100V N-CH LL IN LFPAK56 DUA Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 84W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 62A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1795pF @ 50V Rds On (Max) @ Id, Vgs: 10mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 26.4nC @ 10V Vgs(th) (Max) @ Id: 3V @ 97µA Supplier Device Package: 8-LFPAK Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |