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NVMFWS0D5N04XMT1G

NVMFWS0D5N04XMT1G onsemi


nvmfws0d5n04xm-d.pdf Hersteller: onsemi
Description: 40V T10M IN S08FL GEN 2 PACKAGE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 423A (Tc)
Rds On (Max) @ Id, Vgs: 0.52mOhm @ 50A, 10V
Power Dissipation (Max): 163W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 240µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 18000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+3.13 EUR
3000+ 2.94 EUR
Mindestbestellmenge: 1500
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Technische Details NVMFWS0D5N04XMT1G onsemi

Description: 40V T10M IN S08FL GEN 2 PACKAGE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 423A (Tc), Rds On (Max) @ Id, Vgs: 0.52mOhm @ 50A, 10V, Power Dissipation (Max): 163W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 240µA, Supplier Device Package: 8-DFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote NVMFWS0D5N04XMT1G nach Preis ab 3.01 EUR bis 6.12 EUR

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NVMFWS0D5N04XMT1G NVMFWS0D5N04XMT1G Hersteller : onsemi nvmfws0d5n04xm-d.pdf Description: 40V T10M IN S08FL GEN 2 PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 423A (Tc)
Rds On (Max) @ Id, Vgs: 0.52mOhm @ 50A, 10V
Power Dissipation (Max): 163W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 240µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6250 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 19430 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.04 EUR
10+ 5.08 EUR
100+ 4.11 EUR
500+ 3.65 EUR
Mindestbestellmenge: 3
NVMFWS0D5N04XMT1G Hersteller : onsemi NVMFWS0D5N04XM_D-3150342.pdf MOSFET 40V T10M IN S08FL GEN 2 PACKAGE
auf Bestellung 1490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6.12 EUR
10+ 5.14 EUR
25+ 4.84 EUR
100+ 4.15 EUR
250+ 3.92 EUR
500+ 3.7 EUR
1000+ 3.01 EUR
NVMFWS0D5N04XMT1G Hersteller : ON Semiconductor nvmfws0d5n04xm-d.pdf Power MOSFET, Single N-Channel
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