Produkte > ONSEMI > NVMFWS0D4N04XMT1G
NVMFWS0D4N04XMT1G

NVMFWS0D4N04XMT1G onsemi

nvmfws0d4n04xm-d.pdf Hersteller: onsemi
Description: 40V T10M IN S08FL GEN 2 PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 519A (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 330µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8550 pF @ 25 V
auf Bestellung 1128 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+7.76 EUR
10+ 6.53 EUR
100+ 5.28 EUR
500+ 4.69 EUR
Mindestbestellmenge: 3
Produktrezensionen
Produktbewertung abgeben

Technische Details NVMFWS0D4N04XMT1G onsemi

Description: 40V T10M IN S08FL GEN 2 PACKAGE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 519A (Tc), Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V, Power Dissipation (Max): 197W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 330µA, Supplier Device Package: 8-DFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8550 pF @ 25 V.

Weitere Produktangebote NVMFWS0D4N04XMT1G nach Preis ab 4.07 EUR bis 7.83 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NVMFWS0D4N04XMT1G Hersteller : onsemi NVMFWS0D4N04XM_D-3150358.pdf MOSFET Single N-Channel Power MOSFET 40 V, 509 A, 0.42mohm DFNW6 (Pb-Free)
auf Bestellung 1400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+7.83 EUR
10+ 6.58 EUR
25+ 6.2 EUR
100+ 5.32 EUR
250+ 5.03 EUR
500+ 4.73 EUR
1000+ 4.07 EUR
NVMFWS0D4N04XMT1G Hersteller : ON Semiconductor nvmfws0d4n04xm-d.pdf NVMFWS0D4N04XMT1G
Produkt ist nicht verfügbar
NVMFWS0D4N04XMT1G Hersteller : ON Semiconductor nvmfws0d4n04xm-d.pdf Power MOSFET, Single N-Channel
Produkt ist nicht verfügbar
NVMFWS0D4N04XMT1G NVMFWS0D4N04XMT1G Hersteller : onsemi nvmfws0d4n04xm-d.pdf Description: 40V T10M IN S08FL GEN 2 PACKAGE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 519A (Tc)
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Power Dissipation (Max): 197W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 330µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8550 pF @ 25 V
Produkt ist nicht verfügbar