NVMFWS004N10MCT1G onsemi
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.52 EUR |
| 10+ | 3.77 EUR |
| 100+ | 2.99 EUR |
| 250+ | 2.76 EUR |
| 500+ | 2.5 EUR |
| 1000+ | 2.15 EUR |
| 1500+ | 2.02 EUR |
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Technische Details NVMFWS004N10MCT1G onsemi
Description: MOSFET N-CH 100V 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 138A (Tc), Rds On (Max) @ Id, Vgs: 3.9mOhm @ 48A, 10V, Power Dissipation (Max): 3.8W (Ta), 164W (Tc), Vgs(th) (Max) @ Id: 4V @ 270µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V.
Weitere Produktangebote NVMFWS004N10MCT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| NVMFWS004N10MCT1G | Hersteller : onsemi |
 Description: MOSFET N-CH 100V 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 138A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 48A, 10V Power Dissipation (Max): 3.8W (Ta), 164W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V |
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