auf Bestellung 7465 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 1.49 EUR |
10+ | 1.22 EUR |
100+ | 0.95 EUR |
500+ | 0.81 EUR |
1000+ | 0.66 EUR |
1500+ | 0.61 EUR |
3000+ | 0.59 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NVMFS6H852NLWFT1G onsemi
Description: MOSFET N-CH 80V 11A/42A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc), Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V, Power Dissipation (Max): 3.6W (Ta), 54W (Tc), Vgs(th) (Max) @ Id: 2V @ 45µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVMFS6H852NLWFT1G nach Preis ab 0.8 EUR bis 1.5 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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NVMFS6H852NLWFT1G | Hersteller : onsemi |
Description: MOSFET N-CH 80V 11A/42A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V Power Dissipation (Max): 3.6W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 2V @ 45µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 1216 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS6H852NLWFT1G | Hersteller : ON Semiconductor | Power, Single N-Channel MOSFET |
Produkt ist nicht verfügbar |
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NVMFS6H852NLWFT1G | Hersteller : ON Semiconductor | Power, Single N-Channel MOSFET Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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NVMFS6H852NLWFT1G | Hersteller : onsemi |
Description: MOSFET N-CH 80V 11A/42A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 13.1mOhm @ 10A, 10V Power Dissipation (Max): 3.6W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 2V @ 45µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 906 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |