Technische Details NVMFS6B25NLWFT1G ON Semiconductor
Description: MOSFET N-CH 100V 8A/33A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 33A (Ta), Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V, Power Dissipation (Max): 3.6W (Ta), 62W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote NVMFS6B25NLWFT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
NVMFS6B25NLWFT1G | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 100V 8A Automotive 5-Pin(4+Tab) SO-FL T/R |
Produkt ist nicht verfügbar |
|
 |
NVMFS6B25NLWFT1G | Hersteller : onsemi |
Description: MOSFET N-CH 100V 8A/33A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 33A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 20A, 10V Power Dissipation (Max): 3.6W (Ta), 62W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |