NVMFS5H610NLWFT1G ON Semiconductor

Description: T8 60V LOW COSS, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 48A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 8A, 10V, Power Dissipation (Max): 3.6W (Tc), 52W (Tc), Vgs(th) (Max) @ Id: 2V @ 40µA, Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 13.7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.