auf Bestellung 12800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 4.84 EUR |
100+ | 4.8 EUR |
250+ | 4.56 EUR |
500+ | 4.31 EUR |
1000+ | 3.66 EUR |
1500+ | 2.5 EUR |
3000+ | 2.38 EUR |
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Technische Details NVMFS5C628NT1G onsemi
Description: MOSFET N-CH 60V 28A/150A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V, Power Dissipation (Max): 3.7W (Ta), 110W (Tc), Vgs(th) (Max) @ Id: 4V @ 135µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVMFS5C628NT1G
Foto | Bezeichnung | Hersteller | Beschreibung |
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NVMFS5C628NT1G | Hersteller : onsemi |
Description: MOSFET N-CH 60V 28A/150A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V Power Dissipation (Max): 3.7W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 135µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVMFS5C628NT1G | Hersteller : onsemi |
Description: MOSFET N-CH 60V 28A/150A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 27A, 10V Power Dissipation (Max): 3.7W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 135µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2630 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |