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auf Bestellung 7470 Stücke:
Lieferzeit 826-830 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 9.1 EUR |
10+ | 7.96 EUR |
100+ | 6.6 EUR |
500+ | 5.7 EUR |
1000+ | 5.35 EUR |
1500+ | 4.8 EUR |
3000+ | 4.54 EUR |
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Technische Details NVMFS5C604NLWFAFT1G onsemi
Description: MOSFET N-CH 60V 287A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 287A (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V.
Weitere Produktangebote NVMFS5C604NLWFAFT1G
Foto | Bezeichnung | Hersteller | Beschreibung |
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NVMFS5C604NLWFAFT1G | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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NVMFS5C604NLWFAFT1G | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 287A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V |
Produkt ist nicht verfügbar |
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NVMFS5C604NLWFAFT1G | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 287A (Tc) Rds On (Max) @ Id, Vgs: 1.2mOhm @ 50A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 8900 pF @ 25 V |
Produkt ist nicht verfügbar |