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NVMFS5C410NLWFAFT1G

NVMFS5C410NLWFAFT1G onsemi

nvmfs5c410nl-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 40V 50A/330A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tc)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+3.56 EUR
3000+ 3.35 EUR
Mindestbestellmenge: 1500
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Technische Details NVMFS5C410NLWFAFT1G onsemi

Description: MOSFET N-CH 40V 50A/330A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tc), Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V, Power Dissipation (Max): 3.8W (Ta), 167W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V, Qualification: AEC-Q101.

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NVMFS5C410NLWFAFT1G NVMFS5C410NLWFAFT1G Hersteller : onsemi nvmfs5c410nl-d.pdf Description: MOSFET N-CH 40V 50A/330A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 330A (Tc)
Rds On (Max) @ Id, Vgs: 0.82mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 167W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8862 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+6.88 EUR
10+ 5.79 EUR
100+ 4.68 EUR
500+ 4.16 EUR
Mindestbestellmenge: 3
NVMFS5C410NLWFAFT1G NVMFS5C410NLWFAFT1G Hersteller : onsemi NVMFS5C410NL_D-2319525.pdf MOSFET T6 40V HEFET
auf Bestellung 140 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6.93 EUR
10+ 5.83 EUR
100+ 4.72 EUR
500+ 4.19 EUR
1000+ 3.91 EUR
1500+ 3.45 EUR
3000+ 3.38 EUR
NVMFS5C410NLWFAFT1G NVMFS5C410NLWFAFT1G Hersteller : ON Semiconductor nvmfs5c410nl-d.pdf Single N-Channel Power MOSFET
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NVMFS5C410NLWFAFT1G NVMFS5C410NLWFAFT1G Hersteller : ON Semiconductor nvmfs5c410nl-d.pdf Trans MOSFET N-CH 40V 50A 5-Pin SO-FL EP T/R Automotive AEC-Q101
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