![NVMFD5C462NT1G NVMFD5C462NT1G](https://www.mouser.com/images/onsemiconductor/lrg/SO8FL-Dual-506BT_t.jpg)
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 4.29 EUR |
10+ | 3.87 EUR |
100+ | 3.04 EUR |
500+ | 2.5 EUR |
1500+ | 2.08 EUR |
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Technische Details NVMFD5C462NT1G onsemi
Description: MOSFET 2N-CH 40V 17.6A/70A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.2W (Ta), 50W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 70A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V, Rds On (Max) @ Id, Vgs: 5.4mOhm @ 25A, 10V, Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVMFD5C462NT1G
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NVMFD5C462NT1G | Hersteller : ON Semiconductor |
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auf Bestellung 3139 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFD5C462NT1G | Hersteller : ON Semiconductor |
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Produkt ist nicht verfügbar |
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NVMFD5C462NT1G | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.2W (Ta), 50W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 70A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V Rds On (Max) @ Id, Vgs: 5.4mOhm @ 25A, 10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVMFD5C462NT1G | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.2W (Ta), 50W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 17.6A (Ta), 70A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V Rds On (Max) @ Id, Vgs: 5.4mOhm @ 25A, 10V Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |