Produkte > ONSEMI > NVMFD020N06CT1G
NVMFD020N06CT1G

NVMFD020N06CT1G onsemi

nvmfd020n06c-d.pdf Hersteller: onsemi
Description: MOSFET 2N-CH 60V 8A/27A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 30V
Rds On (Max) @ Id, Vgs: 20.3mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1500+1.56 EUR
3000+ 1.49 EUR
7500+ 1.43 EUR
Mindestbestellmenge: 1500
Produktrezensionen
Produktbewertung abgeben

Technische Details NVMFD020N06CT1G onsemi

Description: MOSFET 2N-CH 60V 8A/27A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W (Ta), 31W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 27A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 30V, Rds On (Max) @ Id, Vgs: 20.3mOhm @ 4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 20µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote NVMFD020N06CT1G nach Preis ab 1.84 EUR bis 3.29 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NVMFD020N06CT1G NVMFD020N06CT1G Hersteller : onsemi nvmfd020n06c-d.pdf Description: MOSFET 2N-CH 60V 8A/27A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 31W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 27A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 355pF @ 30V
Rds On (Max) @ Id, Vgs: 20.3mOhm @ 4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.8nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.29 EUR
10+ 2.74 EUR
100+ 2.18 EUR
500+ 1.84 EUR
Mindestbestellmenge: 6
NVMFD020N06CT1G Hersteller : ON Semiconductor nvmfd020n06c-d.pdf
auf Bestellung 1490 Stücke:
Lieferzeit 21-28 Tag (e)
NVMFD020N06CT1G NVMFD020N06CT1G Hersteller : onsemi NVMFD020N06C_D-2319376.pdf MOSFET Power MOSFET Power, N-Channel, DUAL SO8FL, 60 V, 16.3 mohm, 32 A SO8FL Dual (Pb-Free)
Produkt ist nicht verfügbar