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NVD5C684NLT4G

NVD5C684NLT4G onsemi

nvd5c684nl-d.pdf Hersteller: onsemi
Description: MOSFET N-CHANNEL 60V 38A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 15A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2470 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+2.71 EUR
10+ 2.25 EUR
100+ 1.79 EUR
500+ 1.52 EUR
1000+ 1.29 EUR
Mindestbestellmenge: 7
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Technische Details NVD5C684NLT4G onsemi

Description: MOSFET N-CHANNEL 60V 38A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Rds On (Max) @ Id, Vgs: 16.5mOhm @ 15A, 10V, Power Dissipation (Max): 27W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: DPAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V, Qualification: AEC-Q101.

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NVD5C684NLT4G NVD5C684NLT4G Hersteller : ON Semiconductor NVD5C684NL_D-1814591.pdf MOSFET T6 60V LL DPAK
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
NVD5C684NLT4G NVD5C684NLT4G Hersteller : onsemi nvd5c684nl-d.pdf Description: MOSFET N-CHANNEL 60V 38A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 15A, 10V
Power Dissipation (Max): 27W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Qualification: AEC-Q101
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