NVBLS1D7N10MCTXG onsemi
Hersteller: onsemi
Description: PTNG 100V STD TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32.4A (Ta), 265A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 4.5W (Ta), 303W (Tc)
Vgs(th) (Max) @ Id: 4V @ 698µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V
Qualification: AEC-Q101
Description: PTNG 100V STD TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32.4A (Ta), 265A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 4.5W (Ta), 303W (Tc)
Vgs(th) (Max) @ Id: 4V @ 698µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 14000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2000+ | 5.06 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NVBLS1D7N10MCTXG onsemi
Description: PTNG 100V STD TOLL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32.4A (Ta), 265A (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V, Power Dissipation (Max): 4.5W (Ta), 303W (Tc), Vgs(th) (Max) @ Id: 4V @ 698µA, Supplier Device Package: 8-HPSOF, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V, Qualification: AEC-Q101.
Weitere Produktangebote NVBLS1D7N10MCTXG nach Preis ab 5.33 EUR bis 10.4 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NVBLS1D7N10MCTXG | Hersteller : onsemi | MOSFET N-Channel PowerTrench MOSFET, 100V, 300A, 1.5mohm |
auf Bestellung 1790 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
NVBLS1D7N10MCTXG | Hersteller : onsemi |
Description: PTNG 100V STD TOLL Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32.4A (Ta), 265A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V Power Dissipation (Max): 4.5W (Ta), 303W (Tc) Vgs(th) (Max) @ Id: 4V @ 698µA Supplier Device Package: 8-HPSOF Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9200 pF @ 50 V Qualification: AEC-Q101 |
auf Bestellung 15937 Stücke: Lieferzeit 10-14 Tag (e) |
|