![NVBLS1D1N08H NVBLS1D1N08H](https://www.mouser.com/images/onsemiconductor/lrg/TO-LL8L-100CU_t.jpg)
auf Bestellung 3204 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 12.11 EUR |
10+ | 10.4 EUR |
100+ | 8.66 EUR |
500+ | 7.62 EUR |
1000+ | 6.88 EUR |
2000+ | 6.55 EUR |
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Technische Details NVBLS1D1N08H onsemi
Description: MOSFET N-CH 80V 41A/351A 8HPSOF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc), Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V, Power Dissipation (Max): 4.2W (Ta), 311W (Tc), Vgs(th) (Max) @ Id: 4V @ 650µA, Supplier Device Package: 8-HPSOF, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V, Qualification: AEC-Q101.
Weitere Produktangebote NVBLS1D1N08H nach Preis ab 6.89 EUR bis 12.14 EUR
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NVBLS1D1N08H | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V Power Dissipation (Max): 4.2W (Ta), 311W (Tc) Vgs(th) (Max) @ Id: 4V @ 650µA Supplier Device Package: 8-HPSOF Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 1549 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBLS1D1N08H | Hersteller : ON Semiconductor |
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auf Bestellung 438 Stücke: Lieferzeit 21-28 Tag (e) |
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NVBLS1D1N08H | Hersteller : ON Semiconductor |
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NVBLS1D1N08H | Hersteller : ON Semiconductor |
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NVBLS1D1N08H | Hersteller : ONSEMI |
![]() tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80 Dauer-Drainstrom Id: 351 hazardous: false Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4 euEccn: NLR Verlustleistung: 311 Bauform - Transistor: MO-299A Anzahl der Pins: 9 Produktpalette: - Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.00105 SVHC: Lead (10-Jun-2022) |
Produkt ist nicht verfügbar |
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NVBLS1D1N08H | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V Power Dissipation (Max): 4.2W (Ta), 311W (Tc) Vgs(th) (Max) @ Id: 4V @ 650µA Supplier Device Package: 8-HPSOF Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |