![NVBLS0D8N08XTXG NVBLS0D8N08XTXG](https://www.mouser.com/images/onsemiconductor/lrg/HSOF-8_SPL.jpg)
auf Bestellung 1885 Stücke:
Lieferzeit 199-203 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 11.28 EUR |
10+ | 9.68 EUR |
25+ | 8.76 EUR |
100+ | 8.06 EUR |
250+ | 7.59 EUR |
500+ | 7.11 EUR |
1000+ | 6.41 EUR |
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Technische Details NVBLS0D8N08XTXG onsemi
Description: T10S 80V SG NCH MOSFET TOLL, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 457A (Tc), Rds On (Max) @ Id, Vgs: 0.79mOhm @ 80A, 10V, Power Dissipation (Max): 325W (Tc), Vgs(th) (Max) @ Id: 3.6V @ 720µA, Supplier Device Package: 8-HPSOF, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12920 pF @ 40 V, Qualification: AEC-Q101.
Weitere Produktangebote NVBLS0D8N08XTXG
Foto | Bezeichnung | Hersteller | Beschreibung |
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NVBLS0D8N08XTXG | Hersteller : ON Semiconductor |
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NVBLS0D8N08XTXG | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 457A (Tc) Rds On (Max) @ Id, Vgs: 0.79mOhm @ 80A, 10V Power Dissipation (Max): 325W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 720µA Supplier Device Package: 8-HPSOF Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12920 pF @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVBLS0D8N08XTXG | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 457A (Tc) Rds On (Max) @ Id, Vgs: 0.79mOhm @ 80A, 10V Power Dissipation (Max): 325W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 720µA Supplier Device Package: 8-HPSOF Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12920 pF @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |