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NVBG045N065SC1

NVBG045N065SC1 onsemi

nvbg045n065sc1-d.pdf Hersteller: onsemi
Description: SIC MOS D2PAK-7L 650V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 796 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+27.35 EUR
10+ 24.09 EUR
100+ 20.83 EUR
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Technische Details NVBG045N065SC1 onsemi

Description: SIC MOS D2PAK-7L 650V, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 62A (Tc), Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V, Power Dissipation (Max): 242W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 8mA, Supplier Device Package: D2PAK-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V, Qualification: AEC-Q101.

Weitere Produktangebote NVBG045N065SC1 nach Preis ab 19.01 EUR bis 36.81 EUR

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NVBG045N065SC1 NVBG045N065SC1 Hersteller : onsemi NVBG045N065SC1_D-2307314.pdf MOSFET Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 31 mohm, 650V, M2, D2PAK-7L
auf Bestellung 1228 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+27.54 EUR
10+ 24.27 EUR
100+ 21 EUR
800+ 20.98 EUR
2400+ 19.01 EUR
NVBG045N065SC1 NVBG045N065SC1 Hersteller : ON Semiconductor nvbg045n065sc1-d.pdf Silicon Carbide MOSFET,31mohm,650V Automotive AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
800+36.81 EUR
Mindestbestellmenge: 800
NVBG045N065SC1 Hersteller : ON Semiconductor nvbg045n065sc1-d.pdf NVBG045N065SC1
Produkt ist nicht verfügbar
NVBG045N065SC1 NVBG045N065SC1 Hersteller : ON Semiconductor nvbg045n065sc1-d.pdf Silicon Carbide MOSFET,31mohm,650V Automotive AEC-Q101
Produkt ist nicht verfügbar
NVBG045N065SC1 NVBG045N065SC1 Hersteller : onsemi nvbg045n065sc1-d.pdf Description: SIC MOS D2PAK-7L 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 25A, 18V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 8mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 325 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar