NVBG022N120M3S ON Semiconductor
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 52.13 EUR |
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Technische Details NVBG022N120M3S ON Semiconductor
Description: SIC MOS D2PAK-7L 22MOHM 1200V, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V, Power Dissipation (Max): 234W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 20mA, Supplier Device Package: D2PAK-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 18V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote NVBG022N120M3S nach Preis ab 56.74 EUR bis 88.16 EUR
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NVBG022N120M3S | Hersteller : ON Semiconductor |
 Silicon Carbide MOSFET,22mohm,1200V Automotive AEC-Q101 |
auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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NVBG022N120M3S | Hersteller : ON Semiconductor |
Silicon Carbide MOSFET,22mohm,1200V Automotive AEC-Q101 |
auf Bestellung 189 Stücke: Lieferzeit 14-21 Tag (e) |
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NVBG022N120M3S | Hersteller : ON Semiconductor |
Silicon Carbide MOSFET,22mohm,1200V Automotive AEC-Q101 |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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NVBG022N120M3S | Hersteller : onsemi |
MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L |
auf Bestellung 870 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG022N120M3S | Hersteller : onsemi |
Description: SIC MOS D2PAK-7L 22MOHM 1200V Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V Power Dissipation (Max): 234W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 20mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 795 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVBG022N120M3S | Hersteller : ON Semiconductor |
SiC MOSFET 1200 V 22 mohm |
auf Bestellung 1200 Stücke: Lieferzeit 14-21 Tag (e) |
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NVBG022N120M3S | Hersteller : ON Semiconductor |
Silicon Carbide MOSFET,22mohm,1200V Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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NVBG022N120M3S | Hersteller : onsemi |
Description: SIC MOS D2PAK-7L 22MOHM 1200V Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 58A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V Power Dissipation (Max): 234W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 20mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 148 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 800 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |