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NVB260N65S3

NVB260N65S3 onsemi

nvb260n65s3-d.pdf Hersteller: onsemi
Description: SF3 650V EASY 260MOHM D2PAK AUTO
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 290µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+2.65 EUR
1600+ 2.25 EUR
Mindestbestellmenge: 800
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Technische Details NVB260N65S3 onsemi

Description: SF3 650V EASY 260MOHM D2PAK AUTO, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 260mOhm @ 6A, 10V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 290µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V.

Weitere Produktangebote NVB260N65S3 nach Preis ab 2.06 EUR bis 4.82 EUR

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Preis ohne MwSt
NVB260N65S3 NVB260N65S3 Hersteller : onsemi nvb260n65s3-d.pdf Description: SF3 650V EASY 260MOHM D2PAK AUTO
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 290µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 400 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.73 EUR
10+ 3.93 EUR
100+ 3.13 EUR
Mindestbestellmenge: 4
NVB260N65S3 NVB260N65S3 Hersteller : onsemi NVB260N65S3_D-2319718.pdf MOSFETs Single N-Channel Power MOSFET SUPERFET III, Easy Drive, 650 V , 12 A, 260 mohm, D2PAK
auf Bestellung 486 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.82 EUR
10+ 4.01 EUR
100+ 3.19 EUR
500+ 2.57 EUR
800+ 2.22 EUR
2400+ 2.09 EUR
4800+ 2.06 EUR
NVB260N65S3 Hersteller : ON Semiconductor nvb260n65s3-d.pdf
auf Bestellung 770 Stücke:
Lieferzeit 21-28 Tag (e)
NVB260N65S3 Hersteller : ON Semiconductor nvb260n65s3-d.pdf Single N Channel Power MOSFET, Easy Drive, 650 V, 12 A, 260 m
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NVB260N65S3 Hersteller : ON Semiconductor nvb260n65s3-d.pdf Single N Channel Power MOSFET, Easy Drive, 650 V, 12 A, 260 m Automotive AEC-Q101
Produkt ist nicht verfügbar