Technische Details NVB25P06T4G ON Semiconductor
Description: MOSFET P-CH 60V 27.5A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 27.5A (Ta), Rds On (Max) @ Id, Vgs: 82mOhm @ 25A, 10V, Power Dissipation (Max): 120W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V, Qualification: AEC-Q101.
Weitere Produktangebote NVB25P06T4G
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NVB25P06T4G | Hersteller : ON Semiconductor |
 Trans MOSFET P-CH 60V 27.5A Automotive 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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NVB25P06T4G | Hersteller : onsemi |
Description: MOSFET P-CH 60V 27.5A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 27.5A (Ta) Rds On (Max) @ Id, Vgs: 82mOhm @ 25A, 10V Power Dissipation (Max): 120W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |