NTTFS5D1N06HLTAG onsemi
Hersteller: onsemi
Description: MOSFET N-CH 60V 18A/78A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 16A, 10V
Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 30 V
Description: MOSFET N-CH 60V 18A/78A 8WDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 78A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 16A, 10V
Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
Vgs(th) (Max) @ Id: 2V @ 80µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1500+ | 0.95 EUR |
3000+ | 0.9 EUR |
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Technische Details NTTFS5D1N06HLTAG onsemi
Description: MOSFET N-CH 60V 18A/78A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 78A (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 16A, 10V, Power Dissipation (Max): 3.2W (Ta), 63W (Tc), Vgs(th) (Max) @ Id: 2V @ 80µA, Supplier Device Package: 8-WDFN (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 30 V.
Weitere Produktangebote NTTFS5D1N06HLTAG nach Preis ab 0.94 EUR bis 2.16 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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NTTFS5D1N06HLTAG | Hersteller : onsemi | MOSFETs 60V T8 IN U8FL HEFET |
auf Bestellung 3985 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS5D1N06HLTAG | Hersteller : onsemi |
Description: MOSFET N-CH 60V 18A/78A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 78A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 16A, 10V Power Dissipation (Max): 3.2W (Ta), 63W (Tc) Vgs(th) (Max) @ Id: 2V @ 80µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1610 pF @ 30 V |
auf Bestellung 3385 Stücke: Lieferzeit 10-14 Tag (e) |
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NTTFS5D1N06HLTAG | Hersteller : ON Semiconductor | N Channel Power MOSFET |
Produkt ist nicht verfügbar |