auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 1.87 EUR |
10+ | 1.72 EUR |
1000+ | 0.78 EUR |
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Technische Details NTTFS5820NLTAG onsemi
Description: MOSFET N-CH 60V 11A/37A 8WDFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 37A (Tc), Rds On (Max) @ Id, Vgs: 11.5mOhm @ 8.7A, 10V, Power Dissipation (Max): 2.7W (Ta), 33W (Tc), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Supplier Device Package: 8-WDFN (3.3x3.3), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1462 pF @ 25 V.
Weitere Produktangebote NTTFS5820NLTAG
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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NTTFS5820NLTAG | Hersteller : ONSEMI |
Description: ONSEMI - NTTFS5820NLTAG - Leistungs-MOSFET, n-Kanal, 60 V, 37 A, 0.0101 ohm, WDFN, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60 Dauer-Drainstrom Id: 37 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 33 Bauform - Transistor: WDFN Anzahl der Pins: 8 Produktpalette: - Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.0101 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 1.5 SVHC: Lead (17-Jan-2022) |
auf Bestellung 5387 Stücke: Lieferzeit 14-21 Tag (e) |
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NTTFS5820NLTAG | Hersteller : ON Semiconductor | Trans MOSFET N-CH 60V 11A 8-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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NTTFS5820NLTAG | Hersteller : onsemi |
Description: MOSFET N-CH 60V 11A/37A 8WDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 37A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 8.7A, 10V Power Dissipation (Max): 2.7W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1462 pF @ 25 V |
Produkt ist nicht verfügbar |
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NTTFS5820NLTAG | Hersteller : onsemi |
Description: MOSFET N-CH 60V 11A/37A 8WDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 37A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 8.7A, 10V Power Dissipation (Max): 2.7W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: 8-WDFN (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1462 pF @ 25 V |
Produkt ist nicht verfügbar |