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NTQD6968NR2G

NTQD6968NR2G onsemi

ntqd6968n-d.pdf Hersteller: onsemi
Description: MOSFET 2N-CH 20V 6.2A 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.39W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 16V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-TSSOP
auf Bestellung 14075 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
701+0.70 EUR
Mindestbestellmenge: 701
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Technische Details NTQD6968NR2G onsemi

Description: MOSFET 2N-CH 20V 6.2A 8TSSOP, Packaging: Tape & Reel (TR), Package / Case: 8-TSSOP (0.173", 4.40mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.39W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6.2A, Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 16V, Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 8-TSSOP.

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NTQD6968NR2G NTQD6968NR2G Hersteller : ONSEMI ONSMS11877-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - NTQD6968NR2G - NTQD6968NR2G, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 14075 Stücke:
Lieferzeit 14-21 Tag (e)
NTQD6968NR2G ntqd6968n-d.pdf
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
NTQD6968NR2G NTQD6968NR2G Hersteller : onsemi ntqd6968n-d.pdf Description: MOSFET 2N-CH 20V 6.2A 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.39W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 16V
Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 8-TSSOP
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