NTPF600N80S3Z onsemi
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 4.86 EUR |
| 10+ | 4.07 EUR |
| 100+ | 2.96 EUR |
| 1000+ | 2.46 EUR |
| 5000+ | 2.45 EUR |
| 10000+ | 2.43 EUR |
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Technische Details NTPF600N80S3Z onsemi
Description: SF3 800V 600MOHM TO-220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Tj), Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V, Power Dissipation (Max): 28W (Tc), Vgs(th) (Max) @ Id: 3.8V @ 180µA, Supplier Device Package: TO-220FP, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 400 V.
Weitere Produktangebote NTPF600N80S3Z
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| NTPF600N80S3Z | Hersteller : ON Semiconductor |
 NTPF600N80S3Z |
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NTPF600N80S3Z | Hersteller : onsemi |
Description: SF3 800V 600MOHM TO-220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tj) Rds On (Max) @ Id, Vgs: 600mOhm @ 4A, 10V Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 180µA Supplier Device Package: TO-220FP Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 400 V |
Produkt ist nicht verfügbar |