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NTP35N15G

NTP35N15G onsemi

ntp35n15-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 150V 37A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18.5A, 10V
Power Dissipation (Max): 2W (Ta), 178W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
auf Bestellung 3394 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
198+2.47 EUR
Mindestbestellmenge: 198
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Technische Details NTP35N15G onsemi

Description: MOSFET N-CH 150V 37A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 37A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 18.5A, 10V, Power Dissipation (Max): 2W (Ta), 178W (Tj), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V.

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NTP35N15G Hersteller : ONSEMI ONSMS20232-1.pdf?hkey=6D3A4C79FDBF58556ACFDE234799DDF0 Description: ONSEMI - NTP35N15G - NTP35N15G, SINGLE MOSFETS
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 3596 Stücke:
Lieferzeit 14-21 Tag (e)
NTP35N15G NTP35N15G Hersteller : onsemi ntp35n15-d.pdf Description: MOSFET N-CH 150V 37A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 18.5A, 10V
Power Dissipation (Max): 2W (Ta), 178W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 25 V
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