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NTMTSC4D2N10GTXG

NTMTSC4D2N10GTXG onsemi

ntmtsc4d2n10g-d.pdf Hersteller: onsemi
Description: 100V MVSOA IN DFNW8(PQFN8X8) PAC
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 178A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 88A, 10V
Power Dissipation (Max): 3.9W (Ta), 267W (Tc)
Vgs(th) (Max) @ Id: 4V @ 450µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10450 pF @ 50 V
auf Bestellung 2473 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.28 EUR
10+ 8.63 EUR
100+ 6.98 EUR
500+ 6.21 EUR
1000+ 5.31 EUR
Mindestbestellmenge: 2
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Technische Details NTMTSC4D2N10GTXG onsemi

Description: 100V MVSOA IN DFNW8(PQFN8X8) PAC, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 178A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 88A, 10V, Power Dissipation (Max): 3.9W (Ta), 267W (Tc), Vgs(th) (Max) @ Id: 4V @ 450µA, Supplier Device Package: 8-TDFNW (8.3x8.4), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10450 pF @ 50 V.

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NTMTSC4D2N10GTXG Hersteller : ON Semiconductor ntmtsc4d2n10g-d.pdf MOSFET-Power Single N-Channel
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NTMTSC4D2N10GTXG NTMTSC4D2N10GTXG Hersteller : onsemi ntmtsc4d2n10g-d.pdf Description: 100V MVSOA IN DFNW8(PQFN8X8) PAC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 178A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 88A, 10V
Power Dissipation (Max): 3.9W (Ta), 267W (Tc)
Vgs(th) (Max) @ Id: 4V @ 450µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 159 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10450 pF @ 50 V
Produkt ist nicht verfügbar
NTMTSC4D2N10GTXG Hersteller : onsemi NTMTSC4D2N10G_D-3150565.pdf MOSFET MOSFET Power, Single N-Channel, DFN8, 100V, 4.2mohm, 178A MOSFET Power, Single N-Channel, DFN8, 100V, 4.2mohm, 178A
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