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NTMTSC1D6N10MCTXG

NTMTSC1D6N10MCTXG onsemi

ntmtsc1d6n10mc-d.pdf Hersteller: onsemi
Description: MOSFET N-CH 100V 35A/267A 8TDFNW
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V
Power Dissipation (Max): 5.1W (Ta), 291W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+5.16 EUR
Mindestbestellmenge: 3000
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Technische Details NTMTSC1D6N10MCTXG onsemi

Description: MOSFET N-CH 100V 35A/267A 8TDFNW, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc), Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V, Power Dissipation (Max): 5.1W (Ta), 291W (Tc), Vgs(th) (Max) @ Id: 4V @ 650µA, Supplier Device Package: 8-TDFNW (8.3x8.4), Part Status: Active, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V.

Weitere Produktangebote NTMTSC1D6N10MCTXG nach Preis ab 5.14 EUR bis 10.6 EUR

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NTMTSC1D6N10MCTXG NTMTSC1D6N10MCTXG Hersteller : onsemi ntmtsc1d6n10mc-d.pdf Description: MOSFET N-CH 100V 35A/267A 8TDFNW
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V
Power Dissipation (Max): 5.1W (Ta), 291W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-TDFNW (8.3x8.4)
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V
auf Bestellung 13952 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+10.6 EUR
10+ 8.9 EUR
100+ 7.2 EUR
500+ 6.4 EUR
1000+ 5.48 EUR
Mindestbestellmenge: 2
NTMTSC1D6N10MCTXG Hersteller : onsemi NTMTSC1D6N10MC_D-2319064.pdf MOSFET PTNG 100V, SINGLE NCH, PQFN8X8 DUAL COOL, 1.6 MOHMS MAX
auf Bestellung 5900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+10.58 EUR
10+ 9.06 EUR
100+ 7.34 EUR
500+ 6.51 EUR
1000+ 5.58 EUR
3000+ 5.14 EUR
NTMTSC1D6N10MCTXG NTMTSC1D6N10MCTXG Hersteller : ON Semiconductor ntmtsc1d6n10mc-d.pdf Trans MOSFET N-CH 100V 35A 8-Pin TDFNW EP T/R
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