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NTMTS1D2N08H

NTMTS1D2N08H onsemi

ntmts1d2n08h-d.pdf Hersteller: onsemi
Description: T8-80V IN PQFN88 FOR INDU
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 335A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V
Power Dissipation (Max): 5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+4.73 EUR
Mindestbestellmenge: 3000
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Technische Details NTMTS1D2N08H onsemi

Description: T8-80V IN PQFN88 FOR INDU, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 335A (Tc), Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V, Power Dissipation (Max): 5W (Ta), 300W (Tc), Vgs(th) (Max) @ Id: 4V @ 590µA, Supplier Device Package: 8-DFNW (8.3x8.4), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 40 V.

Weitere Produktangebote NTMTS1D2N08H nach Preis ab 5.02 EUR bis 9.72 EUR

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NTMTS1D2N08H NTMTS1D2N08H Hersteller : onsemi ntmts1d2n08h-d.pdf Description: T8-80V IN PQFN88 FOR INDU
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 335A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 90A, 10V
Power Dissipation (Max): 5W (Ta), 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 590µA
Supplier Device Package: 8-DFNW (8.3x8.4)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 40 V
auf Bestellung 3229 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.72 EUR
10+ 8.15 EUR
100+ 6.6 EUR
500+ 5.86 EUR
1000+ 5.02 EUR
Mindestbestellmenge: 2
NTMTS1D2N08H NTMTS1D2N08H Hersteller : ON Semiconductor ntmts1d2n08h-d.pdf Single N-Channel Power MOSFET
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NTMTS1D2N08H Hersteller : ON Semiconductor ntmts1d2n08h-d.pdf Single N-Channel Power MOSFET
Produkt ist nicht verfügbar
NTMTS1D2N08H Hersteller : onsemi NTMTS1D2N08H_D-2319095.pdf MOSFETs Single N-Channel Power MOSFET 80V, 335A, 1.1mohm, PQFN 8x8
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