NTMTS0D6N04CTXG onsemi
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 8.34 EUR |
| 10+ | 7.16 EUR |
| 100+ | 6.18 EUR |
| 500+ | 5.51 EUR |
| 1000+ | 4.72 EUR |
| 3000+ | 4.03 EUR |
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Technische Details NTMTS0D6N04CTXG onsemi
Description: MOSFET N-CH 40V 533A, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 533A (Tc), Rds On (Max) @ Id, Vgs: 0.48mOhm @ 50A, 10V, Power Dissipation (Max): 5W, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-DFNW (8.3x8.4), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 20 V.
Weitere Produktangebote NTMTS0D6N04CTXG
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NTMTS0D6N04CTXG | Hersteller : ON Semiconductor |
 MOSFET T6 40V SG PQFN8*8 EXPANSION |
auf Bestellung 2441 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTMTS0D6N04CTXG | Hersteller : ON Semiconductor |
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auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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NTMTS0D6N04CTXG | Hersteller : onsemi |
Description: MOSFET N-CH 40V 533A Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 533A (Tc) Rds On (Max) @ Id, Vgs: 0.48mOhm @ 50A, 10V Power Dissipation (Max): 5W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFNW (8.3x8.4) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 20 V |
Produkt ist nicht verfügbar |
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NTMTS0D6N04CTXG | Hersteller : onsemi |
Description: MOSFET N-CH 40V 533A Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 533A (Tc) Rds On (Max) @ Id, Vgs: 0.48mOhm @ 50A, 10V Power Dissipation (Max): 5W Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-DFNW (8.3x8.4) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 187 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11800 pF @ 20 V |
Produkt ist nicht verfügbar |