![NTMTS001N06CLTXG NTMTS001N06CLTXG](https://static6.arrow.com/aropdfconversion/arrowimages/56c5111688203ec12459774ecee4a9e244eece1e/ntmts001n06cltxg.jpg)
NTMTS001N06CLTXG ON Semiconductor
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
16+ | 9.68 EUR |
25+ | 9.24 EUR |
100+ | 8.79 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTMTS001N06CLTXG ON Semiconductor
Description: MOSFET N-CH 60V 398.2A, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 398.2A (Tc), Rds On (Max) @ Id, Vgs: 0.81mOhm @ 50A, 10V, Power Dissipation (Max): 5W, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-DFNW (8.3x8.4), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 25 V.
Weitere Produktangebote NTMTS001N06CLTXG nach Preis ab 8.79 EUR bis 19.68 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
NTMTS001N06CLTXG | Hersteller : ON Semiconductor |
![]() |
auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
![]() |
NTMTS001N06CLTXG | Hersteller : onsemi |
![]() |
auf Bestellung 1620 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
![]() |
NTMTS001N06CLTXG | Hersteller : onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 398.2A (Tc) Rds On (Max) @ Id, Vgs: 0.81mOhm @ 50A, 10V Power Dissipation (Max): 5W Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 25 V |
auf Bestellung 1646 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
NTMTS001N06CLTXG | Hersteller : ON Semiconductor |
![]() |
auf Bestellung 5950 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||||
![]() |
NTMTS001N06CLTXG | Hersteller : ON Semiconductor |
![]() |
Produkt ist nicht verfügbar |
|||||||||||||||||
NTMTS001N06CLTXG | Hersteller : ON Semiconductor |
![]() |
Produkt ist nicht verfügbar |
||||||||||||||||||
![]() |
NTMTS001N06CLTXG | Hersteller : onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 398.2A (Tc) Rds On (Max) @ Id, Vgs: 0.81mOhm @ 50A, 10V Power Dissipation (Max): 5W Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-DFNW (8.3x8.4) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12300 pF @ 25 V |
Produkt ist nicht verfügbar |